advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 25v low on-resistance r ds(on) 9m fast switching characteristic i d 62a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ e as single pulse avalanche energy 3 mj i ar avalanche current a t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.5 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice 60 -55 to 175 200812318 thermal data . 1 operating junction temperature range -55 to 175 storage temperature range continuous drain current, v gs @ 10v 44 pulsed drain current 1 190 linear derating factor 0.4 29 24 total power dissipation 25 gate-source voltage + 20 continuous drain current, v gs @ 10v 62 a p72t02gh/j-hf halogen-free product maximum thermal resistance, junction-ambient (pcb mount) 4 parameter rating drain-source voltage g d s to-252(h) g d s to-251(j) g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap72t02gj) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 25 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - 8 9 m ? v gs =4.5v, i d =15a - 11 15 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 42 - s i dss drain-source leakage current v ds =25v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =20v ,v gs =0v - - 250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =30a - 13 21 nc q gs gate-source charge v ds =20v - 2.7 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9 - nc t d(on) turn-on delay time 2 v ds =15v - 8 - ns t r rise time i d =30a - 80 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 22 - ns t f fall time r d =0.5 -6- ns c iss input capacitance v gs =0v - 930 1490 pf c oss output capacitance v ds =25v - 250 - pf c rss reverse transfer capacitance f=1.0mhz - 180 - pf r g gate resistance f=1.0mhz - 1.1 1.7 ? symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =15a, v gs =0v, - 26 - ns q rr reverse recovery charge di/dt=100a/s - 15 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =25v , l=0.1mh , r g =25 , i as =24a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap72t02gh/j-hf 4.surface mounted on 1 in 2 copper pad of fr4 board
a p72t02gh/j-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 60 120 180 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0.6 1 1.4 1.8 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.0 0.6 1.2 1.8 -50 0 50 100 150 200 t j , junction temperature ( o c ) normalized v gs(th) (v) 5 15 25 35 246810 vgs , gate-to-source voltage (v) r ds(on) (m ) i d =15a t c =25 o c
fig7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain-source on resistance 4 ap72t02gh/j-h f 0 3 6 9 12 0 102030 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =10v v ds =15v v ds =20v i d =30a 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le pulse 100us 1ms 10ms 100ms 1s dc 0 40 80 120 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =175 o c t j =25 o c v ds =5v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 10 20 30 40 0 20406080100 i d (a) r ds(on) (m ) 10v 4.5v 4.2v 3.8v 3.5v 3.2v 3v 2.8v
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